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QED123 Infrared (IR) LED Emitter 880nm 5mm – Narrow Beam, High Power – onsemi

QED123 Infrared (IR) LED Emitter 880nm 5mm – Narrow Beam, High Power – onsemi

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🧭 Product Description

The QED123 is a high-output infrared LED emitter manufactured by onsemi (formerly ON Semiconductor). Built with AlGaAs (Aluminum Gallium Arsenide) chip technology and encapsulated in a clear peach-tinted T-1 3/4 (5mm) package, it emits powerful infrared light at a peak wavelength of 880nm — invisible to the human eye but easily detected by silicon phototransistors and photodiodes.

With a narrow 16° emission angle and 70 mW/sr typical radiant intensity at 100 mA, the QED123 delivers a tightly focused, high-power IR beam ideal for long-range detection, optical communication, and precision sensing applications.

The QED123 is specifically designed to pair with the QSD123 and QSD124 phototransistors (sold separately), forming a matched emitter/detector pair optimized for maximum coupling efficiency at 880nm.


✅ Key Features

  • Peak Emission Wavelength: 880nm (near-infrared, invisible to the human eye)
  • High Radiant Intensity: 70 mW/sr typical at 100 mA — strong, focused IR output
  • Narrow Emission Angle: 16° for precise, directional beam control
  • Fast Switching: 900 ns rise time, 800 ns fall time — suitable for modulated/pulsed IR applications
  • AlGaAs Chip Technology: Superior efficiency and output power compared to standard GaAs IR LEDs
  • Wide Operating Range: -40°C to +100°C
  • Standard T-1 3/4 (5mm) Package: Easy breadboard and through-hole PCB mounting
  • Matched Detectors: Designed to pair with QSD123/QSD124 phototransistors
  • Continuous Forward Current: Up to 100 mA
  • Pb-Free / RoHS Compliant
  • Manufacturer: onsemi (formerly ON Semiconductor)

📊 Specifications

Parameter Symbol Value Unit
Peak Emission Wavelength
λPE
890 (typ)
nm
Wavelength Temp. Coefficient
TCλ
0.2
nm/°C
Emission Angle
2Θ½
16
°
Radiant Intensity (typ)
IE
70 (typ), 50 (min)
mW/sr
Radiant Intensity Temp. Coefficient
TCIE
-0.3
%/°C
Forward Voltage (max)
VF
1.7
V
Forward Voltage Temp. Coefficient
TCVF
-6
mV/°C
Continuous Forward Current (max)
IF
100
mA
Reverse Voltage (max)
VR
5
V
Reverse Current (max)
IR
10
µA
Rise Time (typ)
tr
900
ns
Fall Time (typ)
tf
800
ns
Junction Capacitance (typ)
Cj
11
pF
Power Dissipation
PD
200
mW
Operating Temperature
TOPR
-40 to +100
°C
Storage Temperature
TSTG
-40 to +100
°C
Package
T-1 3/4, 5mm (Case 100CC)
Package Material
Clear, Peach Tinted Plastic
Chip Material
AlGaAs

Test conditions: IF = 100 mA, tp = 20 ms, TA = 25°C unless otherwise noted.

Power dissipation derated linearly at 2.67 mW/°C above 25°C.


🔌 Pin Identification

The QED123 is a 2-lead device in a standard T-1 3/4 (5mm) radial package:

Pin Function
Longer Lead
Anode (+)
Shorter Lead
Cathode (−)
Flat on Package Base
Indicates Cathode side

Note: Like all LEDs, the QED123 is a polarized component. The flat edge on the base of the package identifies the cathode (−) lead. Reversing polarity will prevent the LED from emitting and may cause damage if reverse voltage exceeds 5V.


🔧 Typical Circuit Connection

Basic IR Emitter Circuit

Connect the QED123 in series with a current-limiting resistor to your DC supply:

VCC ──── R (current limiting) ──── QED123 Anode (+) ──── QED123 Cathode (−) ──── GND

Choosing a Current-Limiting Resistor

Use Ohm's Law: R = (VCC − VF) / IF

Supply Voltage Target Current Resistor Value Radiant Intensity
3.3V
20 mA
82 Ω
~20 mW/sr (reduced output)
5V
50 mA
68 Ω
~45 mW/sr
5V
100 mA
33 Ω
~70 mW/sr (maximum output)
12V
100 mA
100 Ω
~70 mW/sr (maximum output)

Note: VF is approximately 1.7V at 100 mA. For maximum IR output and detection range, drive at 100 mA. For battery-powered or low-power applications, 20 mA provides adequate output at shorter ranges.

Driving from a Microcontroller (Arduino, ESP32, etc.)

Most microcontroller GPIO pins can only source 20–40 mA. To drive the QED123 at full 100 mA output, use an NPN transistor or N-channel MOSFET as a switch:

GPIO Pin ──── R1 (1kΩ) ──── NPN Base
                              NPN Collector ──── QED123 Cathode (−)
                              NPN Emitter ──── GND

VCC ──── R2 (33Ω) ──── QED123 Anode (+) ──── NPN Collector

When the GPIO pin goes HIGH, the transistor turns on and drives the QED123 at full current.


🔄 Matched Emitter/Detector Pair

The QED123 is specifically designed to work with onsemi's QSD12X phototransistor family:

Emitter Detector Pairing Notes
QED123 (this product)
QSD123
Standard sensitivity detector
QED123 (this product)
QSD124
High sensitivity detector (recommended for longer range)

Why use a matched pair?

  • The QED123 emits at 880nm — the exact peak sensitivity wavelength of the QSD123/QSD124
  • Matched spectral characteristics maximize coupling efficiency and detection range
  • The QSD123/QSD124's built-in daylight filter blocks visible light while passing the QED123's 880nm emission, reducing false triggers

The QSD124 phototransistor is available in our store. Using the QED123 + QSD124 pair gives you the longest detection range and highest sensitivity combination in the QSD12X/QED12X family.


🛠️ Common Applications

  • Object / Presence Detection — Transmit an IR beam to a QSD124 detector; detect when objects break the beam
  • Optical Counters — Count items on a conveyor or production line
  • Proximity Sensors — Detect nearby objects via reflected IR
  • Optical Encoders — Rotary and linear position sensing
  • Optical Switches / Interrupters — Slotted optical switch applications
  • IR Remote Control Transmitters — Send IR commands to receivers
  • Line-Following Robots — Illuminate surfaces for IR reflectance sensing
  • Wireless IR Communication — Short-range data transmission via modulated IR
  • Tachometers / RPM Counters — Provide the IR source for reflected/interrupted beam sensing
  • Security Systems — IR beam break detection for perimeter monitoring

💡 Design Tips

  • Pulsed operation allows higher peak currents and extends detection range without exceeding average power limits. The QED123's fast 900 ns rise time makes it well-suited for pulsed/modulated applications.
  • Modulated IR (e.g., 38 kHz carrier) improves noise immunity in environments with ambient IR interference (sunlight, incandescent lighting).
  • Alignment matters. With a narrow 16° emission angle, precise alignment between the QED123 emitter and QSD123/QSD124 detector is important for reliable detection, especially at longer distances.
  • Temperature affects output. Radiant intensity decreases by approximately 0.3%/°C. At 85°C, output is roughly 82% of the 25°C value. Account for this in designs operating in high-temperature environments.
  • Forward voltage decreases with temperature at -6 mV/°C. In temperature-variable environments, consider a constant-current driver rather than a simple resistor to maintain consistent output.

⚠️ Important Notes

  1. Polarity matters. The QED123 is a diode — it only conducts in one direction. Reversing polarity will prevent emission. Do not exceed 5V reverse voltage.
  2. Always use a current-limiting resistor. Connecting the QED123 directly to a voltage source without a resistor will destroy it.
  3. Do not exceed 100 mA continuous forward current or 200 mW power dissipation (derate at 2.67 mW/°C above 25°C).
  4. IR light is invisible. You cannot see the QED123's output with the naked eye. Use a smartphone camera (most can detect near-IR) to verify the LED is emitting, or use a phototransistor/photodiode circuit.
  5. Soldering: Use RMA flux. Keep soldering iron tip at least 1.6mm (1/16") from the housing. Iron soldering: 240°C max for 5 seconds. Flow soldering: 260°C max for 10 seconds.
  6. Not for life-support or medical implant applications per onsemi guidelines.

📦 What's in the Box

  • 1, 2, 5, OR 10x QED123 Infrared LED Emitters (onsemi) - quantity selected above

Matched detector: The QSD124 IR phototransistor is the recommended paired detector for this emitter. [Check our store for availability.]


📘 Resources

  • Datasheet: QED123/D (Rev. 2, August 2023)
  • Matched Detectors: QSD123, QSD124
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